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		<title>Bulk growth of single crystal silicon carbide</title>
		<link>http://www.smaximenko.com/bulk-growth-of-single-crystal-silicon-carbide/</link>
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		<pubDate>Fri, 16 Oct 2009 23:57:09 +0000</pubDate>
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				<category><![CDATA[Uncategorized]]></category>
		<category><![CDATA[Crystal Growth]]></category>
		<category><![CDATA[Defects]]></category>
		<category><![CDATA[Silicon carbide]]></category>

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		<description><![CDATA[Silicon carbide (SiC) is a promising wide bandgap semiconductor material particularly suitable for future high power devices operable at high temperatures (&#62;200 °C), at high frequencies, and in harsh environments (chemical and radiation) due to its unique physical and crystallographic properties. The absence of SiC liquid phase, under easily achievable growth conditions of pressure and temperature [...]]]></description>
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